Semiconductor-to-metal Phase Transition in Monolayer ZrS2: GGA+U Study.
Document Type
Article
Publication Date
6-24-2015
Journal Title
AIP Conference Proceedings
Volume
1665
Abstract
We report structural and electronic properties of ZrS2 monolayer within density functional theory (DFT) by inclusion of Hubbard on-site Coulomb and exchange interactions. The importance of on-site interactions for both ZrS2 bulk and monolayer has been highlighted that significantly improves the electronic band-gap. It is demonstrated that mechanical strain induces structural phase transition that results in semiconductor-to-metal transition in monolayer ZrS2. This phenomenon has important implications in technological applications such as flexible, low power and transparent electronic devices. [ABSTRACT FROM AUTHOR]
Recommended Citation
Kumar, Ashok; He, Haiying; and Pandey, Ravindra, "Semiconductor-to-metal Phase Transition in Monolayer ZrS2: GGA+U Study." (2015). Physics and Astronomy Faculty Publications. 125.
https://scholar.valpo.edu/phys_astro_fac_pub/125
